IPD50N06S3L-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.006 Ω

Current - Continuous Drain (Id) @ 25°C :

50A

Series :

OptiMOS-T

Drain to Source Voltage (Vdss) :

55 V

Avalanche Energy Rating (Eas) :

710 mJ

Terminal Position :

Single

Manufacturer :

Rochester Electronics LLC

Pulsed Drain Current-Max (IDM) :

200 A

Drive Voltage (Max Rds On, Min Rds On) :

-

Transistor Element Material :

SILICON

Product Status :

Active

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

-

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

-

Supplier Device Package :

PG-TO252-3-11

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

-

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Unknown

Pin Count :

4

Case Connection :

DRAIN

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

-

JEDEC-95 Code :

TO-252

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Number of Elements :

1

FET Feature :

-

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

2

Package :

Bulk

Surface Mount :

yes

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

55 V

Operating Temperature :

-

Terminal Form :

Gull wing