IPD50N06S2L13ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

240 mJ

Pulsed Drain Current-Max (IDM) :

200A

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0167Ohm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Number of Terminations :

2

Series :

OptiMOS™

Number of Elements :

1

ECCN Code :

EAR99

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 80μA

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Surface Mount :

yes

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

55V

Reference Standard :

AEC-Q101

Drain to Source Voltage (Vdss) :

55V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

136W Tc

Vgs (Max) :

±20V

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Additional Feature :

ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

50A

Rds On (Max) @ Id, Vgs :

12.7m Ω @ 34A, 10V

Mounting Type :

Surface Mount