IPD50N04S4L08ATMA1
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- Mfr.Part #
- IPD50N04S4L08ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 50A TO252-3
- Stock
- 135,879
- In Stock ：
- 135,879
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2010
- Rise Time :
- 8ns
- Power Dissipation-Max :
- 46W Tc
- Series :
- Automotive, AEC-Q101, OptiMOS™
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Turn On Delay Time :
- 4 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2.2V @ 17µA
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2340pF @ 25V
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 50A, 10V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 200A
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Continuous Drain Current (ID) :
- 50A
- Mount :
- Surface Mount
- Halogen Free :
- Halogen Free
- Fall Time (Typ) :
- 18 ns
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 12 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Max Dual Supply Voltage :
- 40V
- Vgs (Max) :
- +20V, -16V
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 11 ns
- Terminal Position :
- Single
- Datasheets
- IPD50N04S4L08ATMA1
N-Channel Tape & Reel (TR) 7.3m Ω @ 50A, 10V +20V, -16V 2340pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N04S4L08ATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 55 mJ.A device's maximal input capacitance is 2340pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 11 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 40V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IPD50N04S4L08ATMA1 Features
the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 50A
the turn-off delay time is 11 ns
based on its rated peak drain current 200A.
IPD50N04S4L08ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N04S4L08ATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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