IPD50N04S410ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

40V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

42 mJ

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

200A

Drain Current-Max (Abs) (ID) :

50A

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 15μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0093Ohm

Published :

2010

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 50A, 10V

Reference Standard :

AEC-Q101

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

18.2nC @ 10V

Number of Terminations :

2

Series :

OptiMOS™

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 25V

Surface Mount :

yes

DS Breakdown Voltage-Min :

40V

Power Dissipation-Max :

41W Tc

Case Connection :

DRAIN