IPD50N04S408ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation-Max :

46W Tc

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

200A

Drain-source On Resistance-Max :

0.0079Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 50A, 10V

FET Type :

N-Channel

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Published :

2010

Surface Mount :

yes

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

40V

Gate Charge (Qg) (Max) @ Vgs :

22.4nC @ 10V

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

50A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

55 mJ

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

40V

Factory Lead Time :

12 Weeks

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4V @ 17μA

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 6V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

JESD-609 Code :

e3