IPD50N04S309ATMA1
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- Mfr.Part #
- IPD50N04S309ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 50A TO252-3
- Stock
- 31,573
- In Stock ：
- 31,573
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- OptiMOS™
- Max Dual Supply Voltage :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 16 ns
- Rise Time :
- 7ns
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time :
- 11 ns
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 63W Tc
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 50A, 10V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Avalanche Energy Rating (Eas) :
- 140 mJ
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.009Ohm
- Halogen Free :
- Halogen Free
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Contains Lead
- Fall Time (Typ) :
- 6 ns
- Number of Terminations :
- 2
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4V @ 28μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 50A
- Pulsed Drain Current-Max (IDM) :
- 200A
- Datasheets
- IPD50N04S309ATMA1
N-Channel Tape & Reel (TR) 9m Ω @ 50A, 10V ±20V 1750pF @ 25V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N04S309ATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 140 mJ.A device's maximal input capacitance is 1750pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 40V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPD50N04S309ATMA1 Features
the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 50A
the turn-off delay time is 16 ns
based on its rated peak drain current 200A.
IPD50N04S309ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N04S309ATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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