IMZ1AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

150mA

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Type :

NPN, PNP

Number of Elements :

2

HTS Code :

8541.21.00.75

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Base Part Number :

*MZ1

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Gain Bandwidth Product :

180MHz

Max Frequency :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300mW

Element Configuration :

Dual

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

60V

Transition Frequency :

180MHz

Width :

1.6mm

Number of Pins :

6

REACH SVHC :

No SVHC

Factory Lead Time :

13 Weeks

Transistor Element Material :

SILICON

Length :

2.9mm

Frequency - Transition :

180MHz 140MHz

Published :

1997

Pin Count :

6

Package / Case :

SC-74, SOT-457

Power Dissipation :

300mW

Height :

1mm

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Polarity :

NPN, PNP

Max Output Current :

150mA

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Continuous Collector Current :

-150mA

hFE Min :

120

Collector Emitter Voltage (VCEO) :

50V

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

-6V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3/e2

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Terminal Finish :

TIN/TIN COPPER

Operating Supply Voltage :

50V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Current Rating :

150mA

VCEsat-Max :

0.4 V