IMX4T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pin Count :

6

REACH SVHC :

No SVHC

Number of Elements :

2

Transition Frequency :

1500MHz

Number of Pins :

6

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

20V

Published :

2008

Collector Base Voltage (VCBO) :

30V

Mount :

Surface Mount

Max Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Power Dissipation :

300mW

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

3V

Polarity :

NPN

Current - Collector Cutoff (Max) :

500nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 10mA 10V

Terminal Form :

Gull wing

VCEsat-Max :

0.5 V

Packaging :

Tape and Reel (TR)

Current Rating :

50mA

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

Transistor Type :

2 NPN (Dual)

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

MX4

Number of Terminations :

6

Voltage - Rated DC :

20V

JESD-609 Code :

e1

Collector Emitter Voltage (VCEO) :

500mV

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 20mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Package / Case :

SC-74, SOT-457

Continuous Collector Current :

50mA

Element Configuration :

Dual

Pbfree Code :

yes

Max Collector Current :

50mA

Collector Emitter Breakdown Voltage :

20V

Radiation Hardening :

No

hFE Min :

56

Gain Bandwidth Product :

1.5 GHz