IMX3T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN (Dual)

Element Configuration :

Dual

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

300mW

Current Rating :

150mA

Max Power Dissipation :

300mW

JESD-609 Code :

e1

Collector Emitter Voltage (VCEO) :

400mV

REACH SVHC :

No SVHC

Published :

2004

Max Collector Current :

150mA

Polarity :

NPN

Gain Bandwidth Product :

180MHz

Pin Count :

6

Voltage - Rated DC :

50V

Continuous Collector Current :

150mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

VCEsat-Max :

0.4 V

Terminal Finish :

TIN SILVER COPPER

ECCN Code :

EAR99

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Collector Emitter Saturation Voltage :

400mV

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

SC-74, SOT-457

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Emitter Base Voltage (VEBO) :

7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Transition Frequency :

180MHz

hFE Min :

120

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Number of Elements :

2

Transistor Application :

AMPLIFIER

Base Part Number :

*MX3

Number of Terminations :

6

Number of Pins :

6

Mounting Type :

Surface Mount

Pbfree Code :

yes