IMH3AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Polarity :

NPN

JESD-609 Code :

e1

VCEsat-Max :

0.3 V

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

Pin Count :

6

Mount :

Surface Mount

Continuous Collector Current :

100mA

Additional Feature :

Digital

Pbfree Code :

yes

Lead Free :

Lead Free

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Package / Case :

SC-74, SOT-457

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Power Dissipation :

300mW

Base Part Number :

*MH3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Output Current :

100mA

Terminal Form :

Gull wing

Operating Supply Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Published :

2004

Power Dissipation :

300mW

Number of Terminations :

6

Number of Pins :

6

hFE Min :

100

REACH SVHC :

No SVHC

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Number of Elements :

2

Voltage - Rated DC :

50V

Transition Frequency :

250MHz

Element Configuration :

Dual

Resistor - Base (R1) :

4.7k Ω

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA ICBO

Emitter Base Voltage (VEBO) :

5V

Frequency - Transition :

250MHz

Collector Emitter Voltage (VCEO) :

300mV

HTS Code :

8541.21.00.75

Collector Emitter Breakdown Voltage :

50V