IMB2AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

68

Transition Frequency :

250MHz

Current Rating :

-30mA

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Power Dissipation :

300mW

Max Operating Temperature :

150°C

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

-100mA

Element Configuration :

Dual

Transistor Application :

SWITCHING

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

6

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

VCEsat-Max :

0.3 V

Polarity :

PNP

Voltage - Rated DC :

-50V

Pbfree Code :

yes

Radiation Hardening :

No

DC Current Gain-Min (hFE) :

68

Number of Terminations :

6

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

7 Weeks

Collector Emitter Voltage (VCEO) :

300mV

Terminal Form :

Gull wing

Published :

2004

Pin Count :

6

JESD-609 Code :

e1

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Max Collector Current :

100mA

Package / Case :

SMD/SMT