HUFA76504DK8T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

80V

DS Breakdown Voltage-Min :

80V

Power - Max :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Series :

UltraFET™

Configuration :

SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

Drain Current-Max (Abs) (ID) :

2.5A

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Number of Elements :

2

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.2Ohm

Rds On (Max) @ Id, Vgs :

200m Ω @ 2.5A, 10V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

MS-012AA

Pbfree Code :

yes