HUFA76407DK8T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.09Ohm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JEDEC-95 Code :

MS-012AA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

3.8A

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Series :

UltraFET™

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

90m Ω @ 3.8A, 10V

Mounting Type :

Surface Mount

Pin Count :

8

FET Type :

2 N-Channel (Dual)

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

JESD-30 Code :

R-PDSO-G8

Power - Max :

2.5W

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Number of Elements :

2

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

11.2nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA