HUF76639S3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rise Time :

55ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Number of Pins :

3

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.027Ohm

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

51A

Packaging :

Tape and Reel (TR)

Power Dissipation :

180W

Voltage - Rated DC :

100V

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Weight :

1.31247g

Turn On Delay Time :

10 ns

Number of Terminations :

2

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Power Dissipation-Max :

180W Tc

Series :

UltraFET™

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Fall Time (Typ) :

110 ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

26m Ω @ 51A, 10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

50A

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Turn-Off Delay Time :

151 ns

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Published :

2002

Vgs (Max) :

±16V

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)