HUF76639P3
- Mfr.Part #
- HUF76639P3
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 51A TO220-3
- Stock
- 23,826
- In Stock :
- 23,826
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Tube
- Series :
- UltraFET™
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 51A, 10V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Datasheets
- HUF76639P3

N-Channel Tube 26m Ω @ 51A, 10V 2400pF @ 25V 86nC @ 10V 100V TO-220-3
Description
The HUF76639P3 is a 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.
Features
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
-
Switching Time vs RGS Curves
-
Ultra Low On-Resistance
- rDS(ON) = 0.026?, VGS = 10V
- rDS(ON) = 0.027?, VGS = 5V
-
Simulation Models
- Temperature Compensated PSPICE? and SABER?
Electrical Models
- Spice and SABER Thermal Impedance Models
Applications
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
-
Switch, buck and synchronous rectification
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
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