HUF76633P3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.035Ohm

Peak Reflow Temperature (Cel) :

260

Additional Feature :

ULTRA LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

1820pF @ 25V

RoHS Status :

RoHS Compliant

Reference Standard :

AEC-Q101

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±16V

Drain Current-Max (Abs) (ID) :

38A

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

FET Type :

N-Channel

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

35m Ω @ 39A, 10V

JESD-609 Code :

e3

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Series :

UltraFET™

Packaging :

Tube

Terminal Finish :

Tin

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Published :

2002

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Power Dissipation-Max :

145W Tc

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED