HUF76629D3S
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- Mfr.Part #
- HUF76629D3S
- Manufacturer
- Harris Corporation
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A TO252AA
- Stock
- 33,795
- In Stock ：
- 33,795
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 67 ns
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 28ns
- JEDEC-95 Code :
- TO-252AA
- Series :
- UltraFET™
- Drain to Source Breakdown Voltage :
- 100V
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 16V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Current Rating :
- 20A
- Continuous Drain Current (ID) :
- 20A
- Resistance :
- 54mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 100V
- Power Dissipation :
- 110W
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 20A, 10V
- Power Dissipation-Max :
- 110W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 1285pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±16V
- Weight :
- 260.37mg
- Turn On Delay Time :
- 6.8 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Fall Time (Typ) :
- 60 ns
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Datasheets
- HUF76629D3S
N-Channel Tape & Reel (TR) 52m Ω @ 20A, 10V ±16V 1285pF @ 25V 46nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76629D3ST Overview
A device's maximum input capacitance is 1285pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 67 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
HUF76629D3ST Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 67 ns
HUF76629D3ST Applications
There are a lot of ON Semiconductor
HUF76629D3ST applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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