HUF76629D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Series :

UltraFET™

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Factory Lead Time :

8 Weeks

Resistance :

54mOhm

Rds On (Max) @ Id, Vgs :

52m Ω @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1285pF @ 25V

Terminal Form :

Gull wing

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

67 ns

Weight :

260.37mg

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Mounting Type :

Surface Mount

Voltage - Rated DC :

100V

FET Type :

N-Channel

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

20A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

28ns

Operating Temperature :

-55°C~175°C TJ

Current Rating :

20A

Turn On Delay Time :

6.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Number of Pins :

3

Power Dissipation :

110W

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Radiation Hardening :

No

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Fall Time (Typ) :

60 ns

Gate to Source Voltage (Vgs) :

16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

110W Tc