HUF76619D3S
- Mfr.Part #
- HUF76619D3S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 18A TO252AA
- Stock
- 2,752
- In Stock :
- 2,752
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-252AA
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 100V
- Number of Terminations :
- 2
- Series :
- UltraFET™
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 75W Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 18A, 10V
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 18A
- Pbfree Code :
- yes
- Packaging :
- Tube
- Reach Compliance Code :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±16V
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 767pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.089Ohm
- Number of Elements :
- 1
- Datasheets
- HUF76619D3S

N-Channel Tube 85m Ω @ 18A, 10V ±16V 767pF @ 25V 29nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76619D3S Overview
A device's maximum input capacitance is 767pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 18A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
HUF76619D3S Features
a 100V drain to source voltage (Vdss)
HUF76619D3S Applications
There are a lot of Rochester Electronics, LLC
HUF76619D3S applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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