HUF76619D3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Terminal Finish :

MATTE TIN

Series :

UltraFET™

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

18A

Drain-source On Resistance-Max :

0.089Ohm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

767pF @ 25V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

85m Ω @ 18A, 10V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Qualification Status :

COMMERCIAL

Surface Mount :

yes

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Power Dissipation-Max :

75W Tc

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

18A Tc

DS Breakdown Voltage-Min :

100V