HUF76609D3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Voltage - Rated DC :

100V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Contact Plating :

Tin

Power Dissipation :

49W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Rating :

10A

Input Capacitance (Ciss) (Max) @ Vds :

425pF @ 25V

Turn-Off Delay Time :

30 ns

Vgs (Max) :

±16V

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation-Max :

49W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Series :

UltraFET™

Fall Time (Typ) :

28 ns

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Element Configuration :

Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistance :

160mOhm

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

160m Ω @ 10A, 10V

Mounting Type :

Surface Mount

Weight :

260.37mg

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

16V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Turn On Delay Time :

10 ns

Qualification Status :

Not Qualified

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

41ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

10A

Pbfree Code :

yes