HUF76609D3ST
- Mfr.Part #
- HUF76609D3ST
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10A TO252AA
- Stock
- 1,715
- In Stock :
- 1,715
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 49W Tc
- Transistor Application :
- SWITCHING
- Current Rating :
- 10A
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 10A, 10V
- Voltage - Rated DC :
- 100V
- Drain to Source Breakdown Voltage :
- 100V
- Rise Time :
- 41ns
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 425pF @ 25V
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-252AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Fall Time (Typ) :
- 28 ns
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Power Dissipation :
- 49W
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 10 ns
- Weight :
- 260.37mg
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±16V
- Continuous Drain Current (ID) :
- 10A
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 30 ns
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Gate to Source Voltage (Vgs) :
- 16V
- FET Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Series :
- UltraFET™
- Mount :
- Surface Mount
- Resistance :
- 160mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- HUF76609D3ST
HUF76609D3ST Documents

N-Channel Tape & Reel (TR) 160m Ω @ 10A, 10V ±16V 425pF @ 25V 16nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76609D3ST Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 425pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
HUF76609D3ST Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 30 ns
HUF76609D3ST Applications
There are a lot of ON Semiconductor
HUF76609D3ST applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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