HUF76443P3
- Mfr.Part #
- HUF76443P3
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A TO220-3
- Stock
- 6,903
- In Stock :
- 6,903
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 260W Tc
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Terminal Finish :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.01Ohm
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 75A
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.115pF @ 25V
- Vgs (Max) :
- ±16V
- Series :
- UltraFET™
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 129nC @ 10V
- Drain to Source Voltage (Vdss) :
- 60V
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 75A, 10V
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Datasheets
- HUF76443P3

N-Channel Tube 8m Ω @ 75A, 10V ±16V 4.115pF @ 25V 129nC @ 10V 60V TO-220-3
HUF76443P3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4.115pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 75A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
HUF76443P3 Features
a 60V drain to source voltage (Vdss)
HUF76443P3 Applications
There are a lot of Rochester Electronics, LLC
HUF76443P3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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