HUF76432P3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

130W Tc

Current - Continuous Drain (Id) @ 25°C :

59A Tc

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain Current-Max (Abs) (ID) :

59A

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

17m Ω @ 59A, 10V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

No

Series :

UltraFET™

Case Connection :

DRAIN

Terminal Position :

Single

Vgs (Max) :

±16V

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Elements :

1

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

1.765pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.019Ohm

Peak Reflow Temperature (Cel) :

Not Applicable