HUF76419S3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

35m Ω @ 29A, 10V

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

HTS Code :

8541.29.00.95

Series :

UltraFET™

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

FET Type :

N-Channel

Power Dissipation-Max :

75W Tc

Reference Standard :

AEC-Q101

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

29A

Surface Mount :

yes

Packaging :

Tube

Transistor Element Material :

SILICON

Terminal Position :

Single

Number of Elements :

1

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Avalanche Energy Rating (Eas) :

121 mJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Drain-source On Resistance-Max :

0.035Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±16V

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Published :

2002

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2