HUF76407D3ST
- Mfr.Part #
- HUF76407D3ST
- Manufacturer
- onsemi
- Package / Case
- TO-252-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A DPAK
- Stock
- 43,945
- In Stock :
- 43,945
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 260.37mg
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 32ns
- Element Configuration :
- Single
- Input Capacitance :
- 350pF
- JESD-609 Code :
- e3
- Current Rating :
- 11A
- Package / Case :
- TO-252-3
- Turn-Off Delay Time :
- 43 ns
- Transistor Application :
- SWITCHING
- Rds On Max :
- 92 mΩ
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 16V
- Drain to Source Resistance :
- 77mOhm
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 38W
- Turn On Delay Time :
- 5 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 60V
- Resistance :
- 92mOhm
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 60V
- Max Operating Temperature :
- 175°C
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Terminations :
- 2
- Power Dissipation :
- 38W
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-252AA
- Threshold Voltage :
- 1V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 60V
- Fall Time (Typ) :
- 45 ns
- Datasheets
- HUF76407D3ST
HUF76407D3ST Documents

Tape & Reel (TR) 60V TO-252-3
HUF76407D3ST Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 43 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 77mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).
HUF76407D3ST Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 1V
a 60V drain to source voltage (Vdss)
HUF76407D3ST Applications
There are a lot of ON Semiconductor
HUF76407D3ST applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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