HUF76407D3ST

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Mfr.Part #
HUF76407D3ST
Manufacturer
onsemi
Package / Case
TO-252-3
Datasheet
Download
Description
MOSFET N-CH 60V 12A DPAK
Stock
43,945
In Stock :
43,945

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
260.37mg
Number of Elements :
1
Continuous Drain Current (ID) :
12A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
32ns
Element Configuration :
Single
Input Capacitance :
350pF
JESD-609 Code :
e3
Current Rating :
11A
Package / Case :
TO-252-3
Turn-Off Delay Time :
43 ns
Transistor Application :
SWITCHING
Rds On Max :
92 mΩ
Polarity/Channel Type :
N-Channel
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
16V
Drain to Source Resistance :
77mOhm
JESD-30 Code :
R-PSSO-G2
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
38W
Turn On Delay Time :
5 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
60V
Resistance :
92mOhm
Case Connection :
DRAIN
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
60V
Max Operating Temperature :
175°C
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Number of Terminations :
2
Power Dissipation :
38W
ECCN Code :
EAR99
JEDEC-95 Code :
TO-252AA
Threshold Voltage :
1V
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Factory Lead Time :
8 Weeks
Min Operating Temperature :
-55°C
Lead Free :
Lead Free
Pbfree Code :
yes
Voltage - Rated DC :
60V
Fall Time (Typ) :
45 ns
Introducing Transistors - FETs, MOSFETs - Single onsemi HUF76407D3ST from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, Number of Pins:3, Number of Terminations:2, HUF76407D3ST pinout, HUF76407D3ST datasheet PDF, HUF76407D3ST amp .Beyond Transistors - FETs, MOSFETs - Single onsemi HUF76407D3ST ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi HUF76407D3ST


Tape & Reel (TR) 60V TO-252-3

HUF76407D3ST Overview


The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 43 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 77mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).

HUF76407D3ST Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 1V
a 60V drain to source voltage (Vdss)


HUF76407D3ST Applications


There are a lot of ON Semiconductor
HUF76407D3ST applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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