HUF76407D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

38W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

12A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Unknown

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

92m Ω @ 13A, 10V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Number of Terminations :

2

Packaging :

Tube

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Elements :

1

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

60V

Series :

UltraFET™

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain-source On Resistance-Max :

0.117Ohm