HUF76139S3STK
- Mfr.Part #
- HUF76139S3STK
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 24,000
- In Stock :
- 24,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-263AB
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Drain to Source Voltage (Vdss) :
- 30 V
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Terminal Position :
- Single
- Supplier Device Package :
- TO-263AB
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Number of Terminals :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Qualification Status :
- COMMERCIAL
- Current - Continuous Drain (Id) @ 25°C :
- 75A (Tc)
- FET Feature :
- -
- Surface Mount :
- yes
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 7.5mOhm @ 75A, 10V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 30 V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Package :
- Bulk
- Manufacturer :
- Rochester Electronics LLC
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs :
- 78 nC @ 10 V
- Series :
- -
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 165W (Tc)
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.01 Ω
- Datasheets
- HUF76139S3STK

N-Channel 7.5mOhm @ 75A, 10V ±20V 2700 pF @ 25 V 78 nC @ 10 V 30 V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF76139S3STK Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2700 pF @ 25 V.To maintain normal operation, the DS breakdown voltage should be kept above 30 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30 V.
HUF76139S3STK Features
a 30 V drain to source voltage (Vdss)
HUF76139S3STK Applications
There are a lot of Fairchild Semiconductor
HUF76139S3STK applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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