HUF76132S3S

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Rochester Electronics LLC

Power Dissipation (Max) :

120W (Tc)

Product Status :

Active

Drain-source On Resistance-Max :

0.016 Ω

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

2

Pin Count :

3

Rds On (Max) @ Id, Vgs :

11mOhm @ 75A, 10V

Qualification Status :

COMMERCIAL

Number of Elements :

1

Pbfree Code :

yes

JEDEC-95 Code :

TO-263AB

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

Terminal Position :

Single

Series :

UltraFET™

Operating Temperature :

-40°C ~ 150°C (TJ)

Terminal Finish :

NOT SPECIFIED

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package Shape :

RECTANGULAR

Technology :

MOSFET (Metal Oxide)

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1650 pF @ 25 V

DS Breakdown Voltage-Min :

30 V

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Bulk

Current - Continuous Drain (Id) @ 25°C :

75A (Tc)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Unknown

Surface Mount :

yes

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30 V

Gate Charge (Qg) (Max) @ Vgs :

52 nC @ 10 V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Feature :

-

Supplier Device Package :

TO-263AB