HUF76132S3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

ULTRA-LOW RESISTANCE

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Terminal Finish :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

11mOhm @ 75A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A (Tc)

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Product Status :

Active

Package :

Bulk

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

30 V

FET Feature :

-

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

2

Input Capacitance (Ciss) (Max) @ Vds :

1650 pF @ 25 V

Pbfree Code :

yes

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-263AB

Drain to Source Voltage (Vdss) :

30 V

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

52 nC @ 10 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.016 Ω

Qualification Status :

COMMERCIAL

Polarity/Channel Type :

N-Channel

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Technology :

MOSFET (Metal Oxide)

Package Shape :

RECTANGULAR

Pin Count :

3

Surface Mount :

yes

Series :

UltraFET™

Operating Temperature :

-40°C ~ 150°C (TJ)

Supplier Device Package :

TO-263AB

Manufacturer :

Rochester Electronics LLC

Power Dissipation (Max) :

120W (Tc)

Terminal Form :

Gull wing