HUF76129P3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Drain-source On Resistance-Max :

0.023Ohm

Surface Mount :

No

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

56A

Terminal Position :

Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Terminal Finish :

Tin/Lead (Sn85Pb15)

Reach Compliance Code :

not_compliant

JESD-609 Code :

e0

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

Number of Terminals :

3

Power Dissipation-Max (Abs) :

105W

Qualification Status :

Not Qualified

Operating Temperature (Max) :

150°C

ECCN Code :

EAR99