HUF76013P3
- Mfr.Part #
- HUF76013P3
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 20A TO220-3
- Stock
- 171
- In Stock :
- 171
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drain Current-Max (Abs) (ID) :
- 20A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.03Ohm
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Surface Mount :
- No
- Power Dissipation-Max :
- 50W Tc
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Series :
- UltraFET™
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 20A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 20V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Package / Case :
- TO-220-3
- Qualification Status :
- COMMERCIAL
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 624pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Reach Compliance Code :
- Unknown
- Datasheets
- HUF76013P3

N-Channel Tube 22m Ω @ 20A, 10V ±20V 624pF @ 20V 17nC @ 10V 20V TO-220-3
HUF76013P3 Overview
The maximum input capacitance of this device is 624pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 20A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.
HUF76013P3 Features
a 20V drain to source voltage (Vdss)
HUF76013P3 Applications
There are a lot of Rochester Electronics, LLC
HUF76013P3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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