HUF76013D3ST

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.03Ohm

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Drain Current-Max (Abs) (ID) :

20A

Number of Elements :

1

Vgs (Max) :

±20V

Pbfree Code :

yes

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

50W Tc

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

624pF @ 20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

22m Ω @ 20A, 10V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

UltraFET™

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-252AA

DS Breakdown Voltage-Min :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

NOT SPECIFIED

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Mounting Type :

Surface Mount