HUF76013D3ST
- Mfr.Part #
- HUF76013D3ST
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 20A TO252AA
- Stock
- 75,000
- In Stock :
- 75,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.03Ohm
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 20A
- Terminal Finish :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Series :
- UltraFET™
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 20A, 10V
- JEDEC-95 Code :
- TO-252AA
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 50W Tc
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 624pF @ 20V
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Reach Compliance Code :
- Unknown
- Datasheets
- HUF76013D3ST

N-Channel Tape & Reel (TR) 22m Ω @ 20A, 10V ±20V 624pF @ 20V 17nC @ 10V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76013D3ST Overview
A device's maximum input capacitance is 624pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 20A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
HUF76013D3ST Features
a 20V drain to source voltage (Vdss)
HUF76013D3ST Applications
There are a lot of Rochester Electronics, LLC
HUF76013D3ST applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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