HUF76013D3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.03Ohm

Current - Continuous Drain (Id) @ 25°C :

20A Tc

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-252AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

50W Tc

DS Breakdown Voltage-Min :

20V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

624pF @ 20V

JESD-609 Code :

e3

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

22m Ω @ 20A, 10V

Series :

UltraFET™

Drain Current-Max (Abs) (ID) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Elements :

1

Pbfree Code :

yes

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Pin Count :

4