HUF76009P3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Supplier Device Package :

TO-220AB

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Element Material :

SILICON

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Surface Mount :

No

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

20 V

Drain to Source Voltage (Vdss) :

20 V

Input Capacitance (Ciss) (Max) @ Vds :

470 pF @ 20 V

FET Feature :

-

JESD-609 Code :

e0

Series :

UltraFET?

Terminal Finish :

TIN LEAD

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Package Shape :

RECTANGULAR

Number of Elements :

1

Package :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

COMMERCIAL

Polarity/Channel Type :

N-Channel

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Product Status :

Active

Mounting Type :

Through Hole

Manufacturer :

Rochester Electronics LLC

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

27mOhm @ 20A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

Pbfree Code :

No

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.039 Ω

Power Dissipation (Max) :

41W (Tc)

FET Type :

N-Channel

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Configuration :

SINGLE WITH BUILT-IN DIODE