HUF76009D3ST

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Series :

UltraFET™

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 20V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

20A

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

27m Ω @ 20A, 10V

Drain to Source Voltage (Vdss) :

20V

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

41W Tc

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Number of Elements :

1

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Surface Mount :

yes

Drain-source On Resistance-Max :

0.039Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

DS Breakdown Voltage-Min :

20V