HUF75925D3ST
- Mfr.Part #
- HUF75925D3ST
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 11A TO252AA
- Stock
- 46,995
- In Stock :
- 46,995
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 20V
- Rds On (Max) @ Id, Vgs :
- 275m Ω @ 11A, 10V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 100W Tc
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- COMMERCIAL
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 11A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.275Ohm
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Series :
- UltraFET™
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- JEDEC-95 Code :
- TO-252AA
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- DS Breakdown Voltage-Min :
- 200V
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.03pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Datasheets
- HUF75925D3ST

N-Channel Tape & Reel (TR) 275m Ω @ 11A, 10V ±20V 1.03pF @ 25V 78nC @ 20V 200V TO-252-3, DPak (2 Leads + Tab), SC-63
HUF75925D3ST Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.03pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 11A.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
HUF75925D3ST Features
a 200V drain to source voltage (Vdss)
HUF75925D3ST Applications
There are a lot of Rochester Electronics, LLC
HUF75925D3ST applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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