HUF75852G3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

UltraFET™

Power Dissipation-Max :

500W Tc

Lead Free :

Lead Free

Number of Terminations :

3

Pbfree Code :

yes

Voltage :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

500W

Voltage - Rated DC :

150V

Rise Time :

151ns

Published :

2002

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

150V

Current :

75A

Mount :

Through Hole

Radiation Hardening :

No

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

16m Ω @ 75A, 10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-247-3

Current Rating :

74A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Turn On Delay Time :

22 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate Charge (Qg) (Max) @ Vgs :

480nC @ 20V

Element Configuration :

Single

Mounting Type :

Through Hole

Number of Pins :

3

Resistance :

16mOhm

Turn-Off Delay Time :

82 ns

Continuous Drain Current (ID) :

75A

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

107 ns

Input Capacitance (Ciss) (Max) @ Vds :

7690pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Number of Elements :

1