HUF75842P3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Current :

43A

Series :

UltraFET™

Continuous Drain Current (ID) :

43A

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Vgs (Max) :

±20V

JESD-609 Code :

e3

Power Dissipation-Max :

230W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2730pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

175nC @ 20V

Power Dissipation :

230W

FET Type :

N-Channel

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

42m Ω @ 43A, 10V

Fall Time (Typ) :

34 ns

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.042Ohm

Number of Elements :

1

Number of Pins :

3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage :

150V

Mount :

Through Hole

Packaging :

Tube

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Turn On Delay Time :

13 ns

Rise Time :

53ns

Voltage - Rated DC :

150V

Published :

2002

Radiation Hardening :

No

Current Rating :

43A

Case Connection :

DRAIN

Turn-Off Delay Time :

47 ns

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

150V