HUF75829D3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Series :

UltraFET™

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 20V

Number of Terminations :

3

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Surface Mount :

No

Terminal Position :

Single

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Rds On (Max) @ Id, Vgs :

110m Ω @ 18A, 10V

Packaging :

Tube

Pbfree Code :

yes

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.11Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

110W Tc

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1.08pF @ 25V

Drain to Source Voltage (Vdss) :

150V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

18A

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

NOT SPECIFIED