HUF75652G3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

20.82mm

Transistor Application :

SWITCHING

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

8m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

7585pF @ 25V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Resistance :

8mOhm

Rise Time :

195ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

4.82mm

Published :

2002

Power Dissipation :

515W

Number of Pins :

3

Drain to Source Breakdown Voltage :

100V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Through Hole

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

75A

Weight :

6.39g

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

Voltage - Rated DC :

100V

Power Dissipation-Max :

515W Tc

Packaging :

Tube

Vgs (Max) :

±20V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Fall Time (Typ) :

190 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

JESD-609 Code :

e3

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Series :

UltraFET™

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Turn On Delay Time :

18.5 ns

Package / Case :

TO-247-3

Length :

15.87mm

Gate Charge (Qg) (Max) @ Vgs :

475nC @ 20V

Turn-Off Delay Time :

80 ns

Mount :

Through Hole

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Current Rating :

75A

Transistor Element Material :

SILICON