HUF75645S3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Width :

4.83mm

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Published :

2002

Series :

UltraFET™

Element Configuration :

Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Height :

11.33mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

14m Ω @ 75A, 10V

Power Dissipation-Max :

310W Tc

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Factory Lead Time :

8 Weeks

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rise Time :

117ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

100V

Fall Time (Typ) :

97 ns

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

238nC @ 20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

JESD-609 Code :

e3

Weight :

1.31247g

Vgs (Max) :

±20V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

3790pF @ 25V

Turn On Delay Time :

14 ns

Nominal Vgs :

4 V

Mounting Type :

Surface Mount

Length :

10.67mm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

75mA

Number of Terminations :

2

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Resistance :

14mOhm

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

310W

Radiation Hardening :

No

Threshold Voltage :

4V

Current Rating :

75A

Turn-Off Delay Time :

41 ns