HUF75645S3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

97 ns

JESD-609 Code :

e3

Power Dissipation :

310W

Mounting Type :

Surface Mount

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Height :

11.33mm

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Current Rating :

75A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

14m Ω @ 75A, 10V

Power Dissipation-Max :

310W Tc

Gate Charge (Qg) (Max) @ Vgs :

238nC @ 20V

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

3790pF @ 25V

Turn-Off Delay Time :

41 ns

Series :

UltraFET™

Voltage - Rated DC :

100V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Turn On Delay Time :

14 ns

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Threshold Voltage :

4V

Vgs (Max) :

±20V

Length :

10.67mm

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Elements :

1

Mount :

Surface Mount

Number of Pins :

3

Number of Terminations :

2

Resistance :

14mOhm

Rise Time :

117ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

75mA

Width :

4.83mm

Weight :

1.31247g

Drain to Source Breakdown Voltage :

100V

Nominal Vgs :

4 V