HUF75645P3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

4.535924g

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

310W Tc

Number of Pins :

3

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

97 ns

Pbfree Code :

yes

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

14 ns

Series :

UltraFET™

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Rise Time :

117ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

14m Ω @ 75A, 10V

Published :

2002

Current Rating :

75A

Resistance :

14mOhm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

75A

Number of Elements :

1

Factory Lead Time :

6 Weeks

Voltage - Rated DC :

100V

Transistor Application :

SWITCHING

Power Dissipation :

310W

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

REACH SVHC :

No SVHC

Turn-Off Delay Time :

41 ns

Gate Charge (Qg) (Max) @ Vgs :

238nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

3790pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Current :

75A

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Voltage :

100V

Height :

16.3mm

Packaging :

Tube

Number of Terminations :

3

Mount :

Through Hole

Width :

4.7mm

Radiation Hardening :

No

Case Connection :

DRAIN

Length :

10.67mm