HUF75639S3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

25 ns

Pbfree Code :

yes

Rise Time :

60ns

ECCN Code :

EAR99

Resistance :

25mOhm

Operating Mode :

ENHANCEMENT MODE

Series :

UltraFET™

Lead Free :

Lead Free

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2002

Mount :

Surface Mount

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

25m Ω @ 56A, 10V

Case Connection :

DRAIN

Weight :

1.31247g

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Voltage - Rated DC :

100V

Number of Terminations :

2

Transistor Element Material :

SILICON

Turn-Off Delay Time :

20 ns

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Terminal Form :

Gull wing

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

200W

Continuous Drain Current (ID) :

56A

Current Rating :

56A

Power Dissipation-Max :

200W Tc

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 20V

Packaging :

Tape and Reel (TR)