HUF75639S3S

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

56A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Number of Pins :

3

Weight :

1.31247g

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Fall Time (Typ) :

25 ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

15 ns

Element Configuration :

Single

Power Dissipation :

200W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rise Time :

60ns

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 20V

Published :

2002

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Series :

UltraFET™

Power Dissipation-Max :

200W Tc

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Terminations :

2

Current Rating :

56A

Resistance :

25mOhm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Number of Elements :

1

Turn-Off Delay Time :

20 ns

Drain to Source Breakdown Voltage :

100V

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

100V

Vgs (Max) :

±20V

Pbfree Code :

yes

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

25m Ω @ 56A, 10V