HUF75639P3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2002

Voltage - Rated DC :

100V

Factory Lead Time :

9 Weeks

Fall Time (Typ) :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JEDEC-95 Code :

TO-220AB

Current Rating :

56A

Resistance :

25mOhm

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Power Dissipation-Max :

200W Tc

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

JESD-609 Code :

e3

Series :

UltraFET™

Weight :

1.8g

Length :

10.67mm

Element Configuration :

Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 20V

Rise Time :

60ns

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Width :

4.83mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

20 ns

Case Connection :

DRAIN

Vgs (Max) :

±20V

Power Dissipation :

200W

Number of Terminations :

3

ECCN Code :

EAR99

Mount :

Through Hole

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Threshold Voltage :

4V

Package / Case :

TO-220-3

Radiation Hardening :

No

Continuous Drain Current (ID) :

56A

Number of Elements :

1

Turn On Delay Time :

15 ns

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

25m Ω @ 56A, 10V

Height :

9.4mm

Packaging :

Tube

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V