HUF75637S3ST

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.03Ohm

Surface Mount :

yes

Number of Elements :

1

Case Connection :

DRAIN

Pbfree Code :

yes

Transistor Application :

SWITCHING

Power Dissipation-Max :

155W Tc

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

44A

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

UltraFET™

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 20V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1.7pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

30m Ω @ 44A, 10V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2