HUF75637S3S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.03Ohm

Transistor Application :

SWITCHING

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 20V

Drain Current-Max (Abs) (ID) :

44A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Number of Terminations :

2

Series :

UltraFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1.7pF @ 25V

Rds On (Max) @ Id, Vgs :

30m Ω @ 44A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Surface Mount :

yes

Power Dissipation-Max :

155W Tc

Terminal Position :

Single

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260