HUF75637P3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Series :

UltraFET™

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Elements :

1

Drain-source On Resistance-Max :

0.03Ohm

DS Breakdown Voltage-Min :

100V

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

Not Applicable

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1.7pF @ 25V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 20V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

155W Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

44A

Rds On (Max) @ Id, Vgs :

30m Ω @ 44A, 10V

Surface Mount :

No